Nanotexturing Process on Microtextured Surfaces of Silicon Solar Cells by SF6/O2 Reactive Ion Etching

被引:12
|
作者
Ji, HyungYong [1 ,2 ]
Choi, Jaeho [1 ,2 ]
Lim, Gyoungho [1 ,2 ]
Parida, Bhaskar [1 ,2 ]
Kim, Keunjoo [1 ,2 ]
Jo, Jung Hee [3 ]
Kim, Hong Seub [3 ]
机构
[1] Chonbuk Natl Technol, Dept Mech Engn, Jeonju 561756, South Korea
[2] Chonbuk Natl Technol, Res Ctr Ind Technol, Jeonju 561756, South Korea
[3] Je Hara Corp, Suwon 443734, South Korea
关键词
Silicon Solar Cell; Reactive Ion Etching (RIE); Plasma Nanotexturing; Black Silicon; MULTICRYSTALLINE; SI;
D O I
10.1166/jnn.2013.8119
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We investigated a nanotexturing process on the microtextured surface of single crystalline silicon solar cell by the reactive on etching process in SF6/O-2 mixed gas ambient. P type Si wafer samples were prepared using a chemical wet etching process to address saw damage removal and achieve microtexturing. The microtextured wafers were further processed for nanotexturing by exposure to reactive ions within a circular tray of wafer carrier containing many small holes for uniform etching. As the dry etching times were increased to 2, 4 and finally to 8 min, surface structures were observed in a transition from nanoholes to nanorods, and a variation in wafer color from dark blue to black. The surface nanostructures showed a lowered photoreflectance and enhanced quantum efficiency within the visible light region with wavelengths of less than 679 rim. The nanohole structure etched for 2 min showed enhanced conversion efficiency when compared to the bare sample: however the nanorod structure etched for 8 min exhibited the decreased efficiency with a reduced short circuit current. indicating that the surface nanostructural damage with the enlarged nanoperimetric surface area is sensitive to surface passivation from the surface recombination process.
引用
收藏
页码:7806 / 7813
页数:8
相关论文
共 50 条
  • [1] Low temperature reactive ion etching of silicon with SF6/O2 plasmas
    [J]. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (02):
  • [2] Reactive Ion Etching Texturing for Multicrystalline Silicon Solar Cells Using a SF6/O2/Cl2 Gas Mixture
    Park, Kwang Mook
    Lee, Myoung Bok
    Jeon, Kyeong Su
    Choi, Sie Young
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (03)
  • [3] Characterization of reactive ion etching of benzocyclobutente in SF6/O2 plasmas
    Chen, Qianwen
    Wang, Zheyao
    Tan, Zhiming
    Liu, Litian
    [J]. MICROELECTRONIC ENGINEERING, 2010, 87 (10) : 1945 - 1950
  • [4] A MECHANISTIC STUDY OF SF6/O2 REACTIVE ION ETCHING OF MOLYBDENUM
    PARK, SJ
    SUN, CP
    PURTELL, RJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1372 - 1373
  • [5] Comprehensive Study of SF6/O2 Plasma Etching for Mc-Silicon Solar Cells
    Li, Tao
    Zhou, Chun-Lan
    Wang, Wen-Jing
    [J]. CHINESE PHYSICS LETTERS, 2016, 33 (03)
  • [6] CRYOGENIC REACTIVE ION ETCHING OF SILICON IN SF6
    BESTWICK, TD
    OEHRLEIN, GS
    ANGELL, D
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (05) : 431 - 433
  • [7] Comprehensive Study of SF6/O2 Plasma Etching for Mc-Silicon Solar Cells
    李涛
    周春兰
    王文静
    [J]. Chinese Physics Letters, 2016, 33 (03) : 143 - 145
  • [8] THE CHARACTERISTICS OF REACTIVE ION ETCHING OF POLYSILICON USING SF6/O2 AND THEIR INTERDEPENDENCE
    TANDON, US
    PANT, BD
    [J]. VACUUM, 1991, 42 (13) : 837 - 843
  • [9] Improved Reflectance for Textured Mc-Silicon Solar Cells by SF6/O2 Plasma Etching
    Li, Tao
    Zhou, Chunlan
    Zhao, Lei
    Wang, Wenjing
    Li, Hailing
    Zhao, Lei
    Diao, Hongwei
    [J]. INTEGRATED FERROELECTRICS, 2011, 128 : 59 - 63
  • [10] Control of sidewall slope in silicon vias using SF6/O2 plasma etching in a conventional reactive ion etching tool
    Figueroa, RF
    Spiesshoefer, S
    Burkett, SL
    Schaper, L
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (05): : 2226 - 2231