A Review of the Influential Factors on the Ferroelectric Domain Structure in BiFeO3 Thin Films

被引：1
|
作者：
Huang, Yaoting [1 ]
Fu, Xiuli [1 ]
Zhao, Xiaohong [1 ]
Tang, Weihua [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
来源：
TESTING AND EVALUATION OF INORGANIC MATERIALS III | 2013年 / 544卷
关键词：
BiFeO3; thin films; Ferroelectric domain; Influential factors;
D O I：
10.4028/www.scientific.net/KEM.544.219
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
BiFeO3 is a very promising multiferroic materials, which can present ferroelectric and antiferromagnetic properties at room temperature (T-n=643 K, T-c=1103 K). Ferroelectric domains in BiFeO3 thin films have attracted much attention due to their potential applications in memory devices. The aim of this paper is to review the main factors which can influence the fermelectric domain structure in BiFeO3 thin films, including substrate, doping and film thickness.
引用
收藏
页码：219 / 225
页数：7
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