XPS analysis of SiC films prepared by radio frequency plasma sputtering

SiC films were deposited by radio frequency (r.f.) plasma sputtering (SPF-312H) on Ti6Al4V substrate with a pre-deposited Cr bond layer. The effects of sputtering parameters on the microstructure and the chemical bonds of the SiC films were investigated using X-ray photoelectron spectroscope (XPS, Perkin Elmer ESCA5600), atomic force microscopy (AFM, HITACHI WAO200), scanning electronic microscopy (SEM, JEOL JSM-5310) and X-ray diffraction (XRD RIGAKU RINT 2000/PC). The Vickers microhardness of the films was examined by a microhardness tester (MVK-H2) equipped a microscope with a magnification of 1000 at 25 gf loads. It was found that the sputtered Si-C films are amorphous on Ti6Al4V under the present deposition conditions. According to XPS analysis, the films almost consist of higher energy C-Si bonds under the higher power and lower chamber pressure. The bond structure hypothesis is well consistent with our previously achieved experimental observations concerning the evolution of surface roughness and microhardness with varying the sputtering power and chamber pressure. (C) 2012 Published by Elsevier B. V. Selection and/or peer review under responsibility of Chinese Vacuum Society (CVS).