Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

被引：1
|
作者：
Takahashi, Miyuki [1 ]
Matsuura, Hideharu [1 ]
机构：
[1] Osaka Electrocommun Univ, Osaka 5728530, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷
关键词：
SiC; semi-insulating semiconductor; transient current; characterization of traps;
D O I：
10.4028/www.scientific.net/MSF.600-603.393
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In order to characterize traps in semi-insulating 4H-SiC that is regarded as an attractive semiconductor for X-ray detectors, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a diode. We have found at least three types of traps whose emission rates at 373 K are 4.9x10(-3), 8.3x10(-3) and 8.0x10(-2) s(-1). Since it is difficult to characterize traps in semi-insulating semiconductors by transient capacitance methods, it is demonstrated that DCTS is a powerful method for determining the densities and emission rates of traps in semi-insulating semiconductors.
引用
收藏
页码：393 / 396
页数：4
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