Fabrication and electrical characteristics of graphene-based charge-trap memory devices

被引：7

作者：

Lee, Sejoon ^{[1
]}

Kim, Sung Min ^{[2
]}

Song, Emil B. ^{[2
]}

Wang, Kang L. ^{[2
]}

Seo, David H. ^{[3
]}

Seo, Sunae ^{[4
]}

机构：

[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[3] Samsung Elect Co Ltd, Yongin 446711, South Korea

[4] Sejong Univ, Dept Phys, Seoul 143747, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 61卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Graphene; Nonvolatile memory; Charge-trap memory; Field-effect transistor; FEW-LAYER GRAPHENE; SPECTROSCOPY; FILMS;

D O I：

10.3938/jkps.61.108

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Graphene-based non-volatile charge-trap memory devices were fabricated and characterized to investigate the implementation effect of both 2-dimensional graphene and the 3-dimensional memory structure. The single-layer-graphene (SLG) channel devices exhibit larger memory windows compared to the multi-layer-graphene (MLG) channel devices. This originates from the gate-coupling strength being larger in SLG devices than in MLG devices. Namely, the electrostatic charge screening effect becomes enhanced upon increasing the number of graphene layers; therefore, the gate tunability is reduced in MLG compared to SLG. The results suggest that SLG is more desirable for memory applications than MLG.

引用

页码：108 / 112

页数：5

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