Semiconductor nanowire array: potential substrates for photocatalysis and photovoltaics

被引:94
|
作者
Wu, YY [1 ]
Yan, HQ [1 ]
Yang, PD [1 ]
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
关键词
semiconductor nanowires; Si and ZnO nanowires;
D O I
10.1023/A:1015260008046
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
A novel vapor-liquid-solid epitaxy (VLSE) process has been developed to synthesize high-density semiconductor nanowire arrays. The nanowires generally are single crystalline and have diameters of 10-200 nm and aspect ratios of 10-100. The a real density of the array can readily approach 10(10) cm(-2). Results based on Si and ZnO nanowire systems are reported here. Because of their single crystallinity and high surface area, these nanowire arrays could find unique applications in photocatalysis and photovoltaics.
引用
收藏
页码:197 / 202
页数:6
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