Piezotransistive GaN microcantilevers based surface work function measurements

被引：10
|
作者：
Bayram, Ferhat [1 ]
Khan, Digangana [1 ]
Li, Hongmei [1 ]
Hossain, Md. Maksudul [1 ]
Koley, Goutam [1 ]
机构：
[1] Clemson Univ, Holcombe Dept Elect & Comp Engn, Clemson, SC 29634 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 04期
基金：
美国国家科学基金会;
关键词：
BULK-GAN; DIODES;
D O I：
10.7567/JJAP.57.040301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Surface work function (SWF) measurements using a piezotransistive III-nitride cantilever has been demonstrated on multiple surfaces. The minimum detectable surface potential change of 10 mV was achieved with a signal to noise ratio of 3. This method was applied to determine the surface potential changes due to exposure of 5 ppm NO2 in graphene and In2O3 thin film, simultaneously with conductivity changes. The potentiometric measurements yielded 100 and 80 mV potential changes in SWFs of graphene and In2O3 respectively, which matches very well with experimental data published earlier indicating the efficacy of this readily miniaturizable measurement technique. (C) 2018 The Japan Society of Applied Physics
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页数：8
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