Memristive Device Fundamentals and Modeling: Applications to Circuits and Systems Simulation

被引:94
|
作者
Eshraghian, Kamran [1 ]
Kavehei, Omid [1 ,2 ]
Cho, Kyoung-Rok [1 ]
Chappell, James M. [2 ]
Iqbal, Azhar [2 ]
Al-Sarawi, Said F. [2 ]
Abbott, Derek [2 ]
机构
[1] Chungbuk Natl Univ, World Class Univ WCU Program, Coll Elect & Informat Engn, Chonju 361763, South Korea
[2] Univ Adelaide, Sch Elect & Elect Engn, Adelaide, SA 5005, Australia
基金
新加坡国家研究基金会;
关键词
Conductance modulation index; content addressable memory (CAM); memory; memristor; memristor-based content addressable memory (MCAM); SPICE modeling; SWITCHING MECHANISM; MEMORY; ARCHITECTURES;
D O I
10.1109/JPROC.2012.2188770
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The nonvolatile memory property of a memristor enables the realization of new methods for a variety of computational engines ranging from innovative memristive-based neuromorphic circuitry through to advanced memory applications. The nanometer-scale feature of the device creates a new opportunity for realization of innovative circuits that in some cases are not possible or have inefficient realization in the present and established design domain. The nature of the boundary, the complexity of the ionic transport and tunneling mechanism, and the nanoscale feature of the memristor introduces challenges in modeling, characterization, and simulation of future circuits and systems. Here, a deeper insight is gained in understanding the device operation, leading to the development of practical models that can be implemented in current computer-aided design (CAD) tools.
引用
收藏
页码:1991 / 2007
页数:17
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