AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

被引：18
|
作者：
Horng, RH [1 ]
Wuu, DS
Wei, SC
Huang, MF
Chang, KH
Liu, PH
Lin, KC
机构：
[1] Da Yeh Univ, Inst Elect Engn, Chang Hwa 515, Taiwan
[2] Visual Photon Epitaxy Co, Tao Yuan 325, Taiwan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 02期
关键词：
D O I：
10.1063/1.124303
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An AlGaInP/AuBe/glass light-emitting diode (LED) was fabricated by a wafer bonding technique. The AlGaInP LED was grown on a temporary GaAs substrate by metalorganic vapor phase epitaxy. By bonding the AuBe/glass substrate on top of epitaxial layers, the temporary GaAs substrate was removed. The luminance of this wafer-bonded device is about 3050 cd/m(2) (600 nm wavelength) at an operating current of 20 mA. It is about three times brighter than a conventional device with an absorbing GaAs substrate. This could be due to the fact that the AuBe/glass substrate serves as a reflective mirror, improving the light extraction efficiency. (C) 1999 American Institute of Physics. [S0003-6951(99)00928-6].
引用
收藏
页码：154 / 156
页数：3
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