Growth kinetics, crystal structures, and properties of silicon nanowires grown by a metal-catalyzed vapor-liquid-solid process

One-dimensional (ID) silicon nanowires (SiNWs) are currently of great interest as one of the most useful and powerful forms of Si nanostructures that could provide a promising alternative for emerging electronic systems. However, the assembly of SiNWs for nanoelectronics and circuits brings about new challenges such as control of the sizes, structures, and properties of SiNWs during the synthesis step. This paper provides a detailed overview of metal-catalyzed vapor-liquid-solid growth of SiNWs, with particular emphases on the growth kinetics and crystal structures of SiNWs. Furthermore, the synthesizing strategies to systematically control the size, crystallographic orientation, and impurity content of SiNWs are highlighted with the aim of tailoring the properties of SiNWs for future device applications.