Quaternary semiconductor derived and formation mechanism by non-vacuum route from solvothermal nanostructures for high-performance application

Kesterites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. I-2-II-IV-VI4 nanocrystal of Cu2ZnSnS4 is a chalcopyrite material with a near-optimum band gap of similar to 1.5 eV. Semiconductor Cu2ZnSnS4 nanorods were successfully prepared via a relatively simple and convenient solvothermal route. The device parameters for a single junction Cu2ZnSnS4 solar cell under AM1.5G are as follows: open circuit voltage of 319 mV, short-circuit current of 25.5 mA/cm(2), fill factor of 25, and a power conversion efficiency of 2.03%. Based on a series of comparative experiments under various reaction conditions, the probable formation mechanism of crystals Cu2ZnSnS4 nanorods is proposed. (C) 2012 Elsevier B.V. All rights reserved.