Synthesis of Water-Soluble Antimony Sulfide Quantum Dots and Their Photoelectric Properties

被引:17
|
作者
Zhu, Jiang [1 ]
Yan, Xuelian [1 ]
Cheng, Jiang [1 ,2 ]
机构
[1] Chongqing Univ Arts & Sci, Coll Mat & Chem Engn, Coinnovat Ctr Micro Nano Optoelect Mat & Devices, 319 Honghe Rd, Chongqing 402160, Peoples R China
[2] State Key Lab Adv Chem Power Sources, 705 Zhonghuabei Rd, Zunyi 563003, Guizhou, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
Sb2S3; Water-soluble quantum dot; Near-infrared emission; Photovoltaic material; SOLAR-CELLS; SB2S3; PHOTODETECTORS; SUBSTRATE; FILM;
D O I
10.1186/s11671-017-2421-1
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Antimony sulfide (Sb2S3) has been applied in photoelectric devices for a long time. However, there was lack of information about Sb2S3 quantum dots (QDs) because of the synthesis difficulties. To fill this vacancy, water-soluble Sb2S3 QDs were prepared by hot injection using hexadecyltrimethylammonium bromide (CTAB) and sodium dodecyl sulfate (SDS) mixture as anionic-cationic surfactant, alkanol amide (DEA) as stabilizer, and ethylenediaminetetraacetic acid (EDTA) as dispersant. Photoelectric properties including absorbing and emission were characterized by UV-Vis-IR spectrophotometer and photoluminescence (PL) spectroscopic technique. An intensive PL emission at 880 nm was found, indicating Sb2S3 QDs have good prospects in near-infrared LED and near-infrared laser application. Sb2S3 QD thin films were prepared by self-assembly growth and then annealed in argon or selenium vapor. Their band gaps (E(g)s) were calculated according to transmittance spectra. The E-g of Sb2S3 QD thin film has been found to be tunable from 1.82 to 1.09 eV via annealing or selenylation, demonstrating the good prospects in photovoltaic application.
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页数:6
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