Development of radiation-hard materials for microstrip detectors

被引：21

作者：

Dubbs, T ^{[1
]}

Kroeger, W

Nissen, T

Pulliam, T

Roberts, D

Rowe, WA

Sadrozinski, HFW

Seiden, A

Thomas, B

Webster, A

Alers, G

机构：

[1] Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys, Santa Cruz, CA 95064 USA

[2] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

[3] N Monterey Cty High Sch, Watsonville, CA 95076 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 04期

关键词：

D O I：

10.1109/23.790688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the search for new detector materials, which would replace silicon as the bulk material in strip detectors for application in high radiation fields. The investigation focuses on SiC, a material with higher bandgap and thus less degradation after irradiation when compared with silicon. Both static properties like the capacitance and leakage currents and dynamic measurements of the charge collection with low-noise amplifiers are presented.

引用

页码：839 / 843

页数：5

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