System Response of Permanent Magnet Synchronous Motor Drive Based on SiC Power Transistor

被引：0
|
作者：
Hsieh, Min-Fu [1 ]
Chen, Nian-Ci [1 ]
That-Dong Ton [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan, Taiwan
来源：
2019 IEEE 4TH INTERNATIONAL FUTURE ENERGY ELECTRONICS CONFERENCE (IFEEC) | 2019年
关键词：
SiC; FOC motor driver; system response analysis; SiC MOSFET; simulation;
D O I：
10.1109/ifeec47410.2019.9015197
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper explores the system response of motor drive systems using wide band gap silicon carbide (SiC) transistors. A SiC power transistor-based voltage source inverter with field-oriented control is established by using MATLAB/Simulink for permanent magnetic synchronous motor. Based on simulation results, the findings are that increasing switching frequency significantly improves dynamic response of speed and that the total harmonic distortion of the three-phase current can also be improved.
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页数：6
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