NH3 as nitrogen source in MBE growth of GaN

被引：0

作者：

Kamp, M ^{[1
]}

Mayer, M ^{[1
]}

Pelzmann, A ^{[1
]}

Thies, A ^{[1
]}

Chung, HY ^{[1
]}

Sternschulte, H ^{[1
]}

Marti, O ^{[1
]}

Ebeling, KJ ^{[1
]}

机构：

[1] UNIV ULM,DEPT OPTOELECT,D-89069 ULM,GERMANY

来源：

GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：135 / 139

页数：5

共 50 条

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