PREPARATION OF HIGH-PURITY SILICON BY THE REACTION OF ZINC AND SILICON TETRA-CHLORIDE

Poly-silicon is the cornerstone of the photovoltaic industry, and more than 80% of the solar cell chips are manufactured by the silicon material. In this paper, high purity silicon is produced through a reaction between silicon tetra-chloride and zinc in a reaction furnace. The experiment results indicate that this method is promising. This experiment lays a good foundation for industrial application. The conditions of this reaction were studied, including temperature, reaction time and the ratio of zinc and silicon tetra-chloride. The high-purity poly-silicon which was get from the research has met the requirements of the performance of solar cells. The energy consumption of this method has been reduced by about 60% as compared with traditional poly-silicon production methods.