The effect of V2O5 on the sintability and physical properties of Bi2O3-NiO-Nb2O5 and Bi2O3-ZnO-Nb2O5 temperature-stable dielectrics

被引：27
|
作者：
Yee, KA [1 ]
Han, KR [1 ]
Kim, HT [1 ]
机构：
[1] Korea Inst Sci & Technol, Div Ceram, Seoul 130650, South Korea
来源：
JOURNAL OF MATERIALS SCIENCE | 1999年 / 34卷 / 19期
关键词：
D O I：
10.1023/A:1004697929795
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The sintering temperature of the bismuth-based temperature-stable dielectrics (BNN-BZN) is reduced down to 850 degrees C with 1.0 wt % of V2O5, which is the lowest to our knowledge. The effect of dopant is studied in detail. The V2O5 seems to provide an eutectic melt below the sintering temperature to increase the sinterability. A composite character was observed with 1.0 wt % of V2O2 doping, while a new solid-solution phase was found without or fewer amounts of additive. Nevertheless, the obtained physical property of the sample with 1.0 wt % of V2O5 is promising. Following combination of physical properties is obtained consistently without any quenching procedure; dielectric constant > 95, Q similar to 2000, T.C. = -8.6 ppm (30-100 degrees C), and specific resistivity = 10(12)Ohm cm. (C) 1999 Kluwer Academic Publishers.
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收藏
页码：4699 / 4704
页数：6
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