Effect of irradiation temperature on dynamic recovery in gallium nitride

被引：5
|
作者：
Jiang, W [1 ]
Weber, WJ [1 ]
机构：
[1] Pacific NW Natl Lab, Richland, WA 99352 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期
关键词：
ion irradiation; dynamic recovery; multiaxial channeling; GaN;
D O I：
10.1016/j.nimb.2005.08.163
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A single crystal gallium nitride film on sapphire was successively irradiated to a fluence of 4.5 Au3+/nm(2) in different areas at varied temperatures ranging from 150 to 800 K. The temperature dependence of disorder on both the Ga and N sublattices has been investigated using a 3.736 MeV He+ backscattering analysis along the < 0001 >- and < 1011 >-axial channeling directions. Significant dynamic recovery of disorder occurs over the applied temperature range. There is a higher degree of disorder on the N sublattice observed along the < 1011 > axis. Some of the defects produced during the irradiation in GaN are effectively shielded by the < 0001 > axis. Published by Elsevier B.V.
引用
收藏
页码：431 / 433
页数：3
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