Room-temperature pulsed operation of GaAsSb GaAs vertical-cavity surface-emitting lasers

被引：47
|
作者：
Anan, T
Yamada, M
Tokutome, K
Sugou, S
Nishi, K
Kamei, A
机构：
[1] Opt Interconnect NEC Lab, RWCP, Tsukuba, Ibaraki 3058501, Japan
[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 11期
关键词：
D O I：
10.1049/el:19990633
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs-based long-wavelength vertical-cavity surface-emitting lasers with a GaAsSb quantum well active layer have been fabricated for the first time. Room temperature pulsed oscillation was obtained at a wavelength of 1.22 mu m with a threshold current of 20mA for devices with 25 mu m square mesa.
引用
收藏
页码：903 / 904
页数：2
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