Effect of Pressure on the Electrical Resistance of Individual Boron-Doped Carbon Nanotubes

被引：0
|
作者：
Watanabe, Tohru [1 ]
Tomioka, Fumiaki [1 ]
Ishii, Satoshi [1 ]
Tsuda, Shunsuke [1 ]
Yamaguchi, Takahide [1 ]
Takano, Yoshihiko [1 ]
机构：
[1] Natl Inst Mat & Sci, Tsukuba, Ibaraki 3050047, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期
关键词：
SUPERCONDUCTIVITY; FILMS;
D O I：
10.1143/JJAP.51.105103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical resistance of an individual boron-doped multi-walled carbon nanotube was measured under high pressure up to 1.73 GPa. The resistance decreased drastically when pressure was applied. The temperature dependence of the resistance was explained by a variable range hopping transport model, and the dimensionality was observed to change from one to three dimensions with increasing pressure. (C) 2012 The Japan Society of Applied Physics
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页数：3
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