Simulation of grain evolution in solidification of silicon on meso-scopic scale

被引：2

作者：

Qi, Xiaofang ^{[1
,2
]}

Liu, Lijun ^{[2
]}

Riberi-Beridot, Thecle ^{[3
]}

Mangelinck-Noel, Nathalie ^{[3
]}

Miller, Wolfram ^{[1
]}

机构：

[1] Leibniz Inst Kristallzuchtung IKZ, Max Born Str 2, D-12489 Berlin, Germany

[2] Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China

[3] Univ Toulon & Var, Aix Marseille Univ, CNRS, IM2NP, F-13397 Marseille, France

来源：

COMPUTATIONAL MATERIALS SCIENCE | 2019年 / 159卷

关键词：

Directional solidification; Multicrystalline silicon; Cellular automata; Lattice Boltzmann methods; MULTI-CRYSTALLINE SILICON; DIRECTIONAL SOLIDIFICATION; POLYCRYSTALLINE SILICON; HEAT-TRANSFER; GROWTH; MODEL; MELT;

D O I：

10.1016/j.commatsci.2018.12.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a cellular automata model for computing the grain evolution during directional solidification of silicon on a meso-scopic scale. Firstly, the method is applied to test cases with different shapes of the melt/crystal interface. In a second step we compute the case of an experiment with in-situ observation of the interface shape evolution (Tandjaoui et al., 2012). Here we also include the effect of twinning. The interchanging appearance of two twins could be revisited by our calculations. The probabilities used correspond to those which were analytically derived for an undercooling of Delta T = 0.6 K (Lin and Lan, 2017). This undercooling is a typical value for a groove with < 1 1 1 > facets (Miller and Popescu, 2017).

引用

页码：432 / 439

页数：8

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