Magnetomechanical Four-State Memory

被引：25

作者：

Watson, Chad S. ^{[1
]}

Hollar, Courtney ^{[1
,2
]}

Anderson, Kimball ^{[1
,2
]}

Knowlton, William B. ^{[1
,3
]}

Muellner, Peter ^{[1
]}

机构：

[1] Boise State Univ, Dept Mat Sci & Engn, Boise, ID 83725 USA

[2] Boise State Univ, Dept Mech & Biomed Engn, Boise, ID 83725 USA

[3] Boise State Univ, Dept Elect & Comp Engn, Boise, ID 83725 USA

来源：

ADVANCED FUNCTIONAL MATERIALS | 2013年 / 23卷 / 32期

基金：

美国国家科学基金会;

关键词：

magnetic shape memory alloys; magnetic memory; nanomechanical properties; MN-GA MARTENSITE; MAGNETIC FORCE MICROSCOPY; CELLULAR-AUTOMATA; SINGLE-CRYSTALS; DATA-STORAGE; THIN-FILMS; STRESS; STRAIN; PHASE;

D O I：

10.1002/adfm.201203015

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

With current non-volatile memory technology approaching intrinsic storage density limits, new data storage technologies are under development. Probe-based storage systems provide alternatives to conventional mass storage technologies. Ni-Mn-Ga, a ferromagnetic shape memory alloy (FSMA), is proposed as a medium for multi-bit storage using scanning probe microscopy (SPM) techniques. Local modifications of the magnetic stray field were achieved using nanoindentation. Magnetic poles collect within the indentation, which is leveraged to control the magnetic stray field for the patterning of magnetic information. Four magnetic-based memory states are possible due to magnetic field or stress-induced twin rearrangement along two crystal orientations, each with two possible magnetic orientations.

引用

页码：3995 / 4001

页数：7

共 50 条

[1] A four-state memory cell based on magnetoelectric composite
SHI Zhan1
2 State Key Laboratory of New Ceramics and Fine Processing
[J]. Science Bulletin, 2008, (14) : 2136 - 2139
[2] A four-state memory cell based on magnetoelectric composite
Shi Zhan
Wang CuiPing
Liu XinJun
Nan CeWen
[J]. CHINESE SCIENCE BULLETIN, 2008, 53 (14): : 2135 - 2138
[3] Nonvolatile Current-Modulated Four-State Magnetoplasmonic Memory
Nowakowski, Mark E.
[J]. PHYSICAL REVIEW APPLIED, 2019, 11 (01)
[4] Four-State Anti-Ferroelectric Random Access Memory
Vopson, Melvin M.
Tan, Xiaoli
[J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (12) : 1551 - 1554
[5] Four-state memory based on ferroelectric tunnel junctions with double ferroelectric layers
Chen, Geng
Ma, Zhijun
Zhou, Peng
Mei, Zhiheng
Liang, Kun
Zhang, Tianjin
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (06):
[6] An Allosterically Regulated, Four-State Macrocycle
d'Aquino, Andrea I.
Cheng, Ho Fung
Barroso-Flores, Joaquin
Kean, Zachary S.
Mendez-Arroyo, Jose
McGuirk, C. Michael
Mirkin, Chad A.
[J]. INORGANIC CHEMISTRY, 2018, 57 (07) : 3568 - 3578
[7] Four-state standard Potts model
Proshkin, A. I.
Kassan-Ogly, F. A.
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2015, 383 : 13 - 18
[8] A four-state fluorescent molecular switch
Liu, Yuan
Zhou, Jiawang
Wasielewski, Michael R.
Xing, Hang
Mirkin, Chad A.
[J]. CHEMICAL COMMUNICATIONS, 2018, 54 (85) : 12041 - 12044
[9] A four-state adaptive Hopf oscillator
Li, XiaoFu
Ul Shougat, Md Raf E.
Kennedy, Scott
Fendley, Casey
Dean, Robert N.
Beal, Aubrey N.
Perkins, Edmon
[J]. PLOS ONE, 2021, 16 (03):
[10] Four-state non-volatile memory in a multiferroic spin filter tunnel junction
Ruan, Jieji
Li, Chen
Yuan, Zhoushen
Wang, Peng
Li, Aidong
Wu, Di
[J]. APPLIED PHYSICS LETTERS, 2016, 109 (25)

← 1 2 3 4 5 →