Observation of Ni silicide formations and field emission properties of Ni silicide nanowires

被引：26

作者：

Kim, Joondong ^{[1
]}

Lee, Eung-Sug ^{[1
]}

Han, Chang-Soo ^{[1
]}

Kang, Youngjin ^{[2
]}

Kim, Dojin ^{[2
]}

Anderson, Wayne A. ^{[3
]}

机构：

[1] KIMM, Nanomech Syst Res Ctr, Taejon 305343, South Korea

[2] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea

[3] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 08期

关键词：

Ni silicide nanowires; growth condition; field emission;

D O I：

10.1016/j.mee.2008.04.034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Ni silicide nanowires were grown by physical vapor deposition. The morphological changes of silicide formation were observed on a gradient Ni film thickness, which visualized the critical thickness is 6080 nm to grow nanowires. The field emission measurement provided uniform characteristics and high field enhancement factors were obtained to be 3180 and 3002 from the Ni silicide nanowires grown on a Si substrate and a tungsten plate. respectively. By using a conductive tungsten plate, the emission current was enhanced to be 172.5 mu A/cm(2) comparing to 76.5 mu A/cm(2) from a Si Substrate at 5 V/mu m. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1709 / 1712

页数：4

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