Etching damage and its recovery by soft X-ray irradiation observed in soft X-ray absorption spectra of TiO2 thin film

被引：3

作者：

Niibe, Masahito ^{[1
]}

Sano, Keiji ^{[1
]}

Kotaka, Takuya ^{[1
]}

Kawakami, Retsuo ^{[2
]}

Tominaga, Kikuo ^{[2
]}

Nakano, Yoshitaka ^{[3
]}

机构：

[1] Univ Hyogo, Lab Adv Sci & Technol Ind, Kamigori, Hyogo 6781205, Japan

[2] Univ Tokushima, Inst Sociotechno Sci Technol, Tokushima 7708506, Japan

[3] Chubu Univ, Inst Sci & Technol Res, Kasugai, Aichi 4878501, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 12期

关键词：

LIGHT; DEPOSITION;

D O I：

10.1063/1.4798301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Damage characteristics of TiO2 thin films etched by N-2 plasma were analyzed using soft X-ray absorption spectroscopy. Changes in the spectra at the Ti-L-2,L-3 near-edge X-ray absorption fine structure (NEXAFS) resulting from etching damage were observed more in the bulk region rather than in the sample surface. The damaged spectra were recovered to the spectra of the as-grown sample by soft X-ray irradiation for 10 min. Moreover, the once-recovered spectrum of the irradiated sample was returned to the disordered shape by storage in dark place for 10 days. These results could have been caused by electron-related structural relaxation in appearance. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798301]

引用

页数：3

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