Magnetic and electric transport properties of Nd0.75Sr1.25Co1-xMnxO4

被引:4
|
作者
Huang, S. L. [1 ]
Guan, L. X. [1 ]
Yi, J. B. [2 ]
Zhao, B. C. [1 ]
Wu, Y. [1 ]
Fan, Z. C. [1 ]
Sum, T. C. [1 ]
Ding, J. [2 ]
Wang, L. [1 ]
机构
[1] Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore
关键词
antiferromagnetic materials; crystal structure; electrical resistivity; ferromagnetic materials; ferromagnetic-antiferromagnetic transitions; magnetisation; manganese; neodymium compounds; strontium compounds; superexchange interactions; tunnelling magnetoresistance;
D O I
10.1063/1.3046673
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present the results of a systematic investigation of crystal structure, dc magnetization, ac susceptibility, resistivity, and magnetoresistance (MR) of Nd0.75Sr1.25Co1-xMnxO4 (0 <= x <= 0.3) polycrystals. All synthesized specimens are indexed in the same tetragonal space group I4/mmm with random occupation of Co and Mn ions at the identical site. The refinement result confirms the tetragonal distortion of the CoO6 octahedron with elongation along the c axis. The substitution of the Mn ions at Co site brings about the suppression of ferromagnetism as well as the enhancement of antiferromagnetism. The coexistence of ferromagnetic double exchange interactions and antiferromagnetic superexchange interactions and the suppression of ferromagnetism with increasing Mn doping are substantiated by the isothermal magnetization hysteresis loops. The result suggests that the substitution creates more antiferromagnetic bonds with superexchange interactions at the expense of the existing Co-O-Co bonds with ferromagnetic double exchange interactions. At low temperature, a crossover from ferromagnetic cluster-glass phase to spin-glass phase is shown in the dc and ac magnetic measurements. For all the specimens, the resistivity rho(T) follows semiconducting behavior (d rho/dT < 0) in the whole measured temperature region. The substitution induces an obvious increase in resistivity, which originates from the diminishing of ferromagnetic double exchange interactions and the localization of charge carriers caused by the disorder for the substitution. The system presents negative MR due to tunneling effect at low temperatures and positive MR at high-temperature range.
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页数:6
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