Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

被引：8

作者：

Zhu, C. Y. ^{[1
]}

Wu, M. ^{[1
]}

Kayis, C. ^{[1
]}

Zhang, F. ^{[1
]}

Li, X. ^{[1
]}

Ferreyra, R. A. ^{[1
]}

Matulionis, A. ^{[2
]}

Avrutin, V. ^{[1
]}

Ozgur, U. ^{[1
]}

Morkoc, H. ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA

[2] Inst Semicond Phys, Fluctuat Res Lab, LT-01108 Vilnius, Lithuania

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期

关键词：

INALN/GAN HEMTS; RELIABILITY; SUBSTRATE; DENSITY;

D O I：

10.1063/1.4751037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In15.7%Al84.3%N/AlN/GaN heterojunction field effect transistors have been electrically stressed under four different bias conditions: on-state-low-field stress, reverse-gate-bias stress, off-state-high-field stress, and on-state-high-field stress, in an effort to elaborate on hot electron/phonon and thermal effects. DC current and phase noise have been measured before and after the stress. The possible locations of the failures as well as their influence on the electrical properties have been identified. The reverse-gate-bias stress causes trap generation around the gate area near the surface which has indirect influence on the channel. The off-state-high-field stress and the on-state-high-field stress induce deterioration of the channel, reduce drain current and increase phase noise. The channel degradation is ascribed to the hot-electron and hot-phonon effects. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751037]

引用

页数：4

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