Direct Observation of the Thickness-Dependent Dielectric Response of MoS2 and WSe2

被引:8
|
作者
Kang, Yebin [1 ]
Jeon, Dohyeon [1 ]
Kim, Taekyeong [1 ]
机构
[1] Hankuk Univ Foreign Studies, Dept Phys, Yongin 17035, South Korea
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2020年 / 124卷 / 33期
基金
新加坡国家研究基金会;
关键词
FORCE MICROSCOPY; NANOMATERIALS; TRANSITION;
D O I
10.1021/acs.jpcc.0c04438
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a direct observation of the thickness-dependent dielectric response of MoS2 and WSe2 via mobile charge carrier measurements based on second-harmonic electrostatic force microscopy (EFM). The measured second harmonic (2 omega) signals in the EFM are related to the dielectric polarization of MoS2 and WSe2 due to their charge carrier concentration and mobility. We find that the 2 omega signals increase with the thickness in thin layers and saturate to bulk values for MoS2 and WSe2 flakes. These thickness-dependent dielectric behaviors are consistent with previous first-principles calculations for layered transition metal dichalcogenide (TMDC) materials. Our work provides useful information about enhancing the performance of the optoelectrical devices based on layered two-dimensional materials.
引用
收藏
页码:18316 / 18320
页数:5
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