Auger processes are of great importance for both fundamental research and technological applications, since they change the number of charge carriers in a system. Here, we present a microscopic study on the influence of Auger relaxation channels on the carrier dynamics in graphene. The presented time-, momentum-, and angle-resolved calculations reveal the importance of the impact excitation giving rise to a significant multiplication of optically excited carriers and a remarkable Coulomb-induced carrier cooling effect. We propose low pump fluence, high excitation energy, and low ambient temperature as optimal conditions for an efficient carrier multiplication reaching values of up to 2.5 even in the presence of phonons. The optimal regime is confirmed by an analytic expression for the carrier multiplication, which gives further insights into the role of Auger processes for a Dirac-like carrier system. Our results can help to guide future experiments to demonstrate the carrier multiplication in graphene and related structures.
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Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
Technische Universität Dresden, Dresden
University of Maryland, College Park, 20742, MDHelmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
Mittendorff M.
Wendler F.
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Technische Universität Berlin, Hardenbergstraße 36, BerlinHelmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
Wendler F.
Malic E.
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Technische Universität Berlin, Hardenbergstraße 36, BerlinHelmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
Malic E.
Knorr A.
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Technische Universität Berlin, Hardenbergstraße 36, BerlinHelmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
Knorr A.
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Orlita M.
Potemski M.
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Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, GrenobleHelmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
Potemski M.
Berger C.
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Georgia Institute of Technology, Atlanta, 30332, GA
CNRS-Institut Néel, GrenobleHelmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
Berger C.
De Heer W.A.
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Georgia Institute of Technology, Atlanta, 30332, GA
Department of Physics, King Abdulaziz University, JeddahHelmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
De Heer W.A.
Schneider H.
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Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, DresdenHelmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
Schneider H.
Helm M.
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Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
Technische Universität Dresden, DresdenHelmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
Helm M.
Winnerl S.
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Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, DresdenHelmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden
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Georgia Inst Technol, Atlanta, GA 30332 USA
CNRS, Inst Neel, F-38042 Grenoble, FranceHelmholtz Zentrum Dresden Rossendorf, D-01314 Dresden, Germany
Berger, Claire
de Heer, Walter A.
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Georgia Inst Technol, Atlanta, GA 30332 USA
King Abdulaziz Univ, Dept Phys, Jeddah 22254, Saudi ArabiaHelmholtz Zentrum Dresden Rossendorf, D-01314 Dresden, Germany
de Heer, Walter A.
Schneider, Harald
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Helmholtz Zentrum Dresden Rossendorf, D-01314 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, D-01314 Dresden, Germany
Schneider, Harald
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Helm, Manfred
Winnerl, Stephen
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Helmholtz Zentrum Dresden Rossendorf, D-01314 Dresden, GermanyHelmholtz Zentrum Dresden Rossendorf, D-01314 Dresden, Germany