Transient simulation of millimeter-wave circuits incorporating numerical device modeling

被引：4
|
作者：
Tait, GB [1 ]
Jones, SH
机构：
[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
[2] Univ Virginia, Dept Elect Engn, Charlottesville, VA 22903 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1999年 / 47卷 / 06期
关键词：
D O I：
10.1109/22.769321
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fast convolution-based computational approach is employed to integrate numerical solid-state device simulation with nonlinear millimeter-wave circuit simulation. Unlike pre,previous combined harmonic-balance/deviee approaches, the high-frequency circuit/physical device response is allowed to evolve in time to its natural steady-state mode of operation, permitting insight into harmonic and parametric energy exchange, stability, load pulling, and frequency tuning effects. To demonstrate this computationally efficient approach, a secund-harmonic 150-GHz transferred electron oscillator is simulated using both conventional Gunn and novel stable-depletion-layer InP devices. The integrated det;device/circuit simulations in the time domain enable us to investigate the formation and buildup of the oscillation modes in detail.
引用
收藏
页码：877 / 881
页数：5
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