Preparation and characterization of chemical bath deposited nanocrystalline ZnSe thin films using Na3-citrate and hydrazine hydrate: A comparative study

被引:11
|
作者
Agawane, G. L. [1 ]
Shin, Seung Wook [2 ]
Suryawanshi, M. P. [1 ,3 ]
Gurav, K. V. [1 ]
Moholkar, A. V. [3 ]
Lee, Jeong Yong [2 ]
Patil, P. S. [1 ,3 ]
Yun, Jae Ho [4 ]
Kim, Jin Hyeok [1 ]
机构
[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[3] Shivaji Univ, Dept Phys, Thin Film Nanomat Lab, Kolhapur 416004, Maharashtra, India
[4] KIER, Photovolta Res Grp, Taejon 305343, South Korea
关键词
Thin film solar cells; Chemical bath deposition; Buffer layers; Non-toxic complexing agent; CITRATES; GROWTH;
D O I
10.1016/j.matlet.2013.04.063
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, a comparative study reported on the characteristics of Zinc Selenide (ZnSe) thin films prepared by a chemical bath deposition method using the non-toxic tri-sodium citrate (Na-3-citrate) and toxic hydrazine hydrate (HH) as complexing agents. Morphological, structural, chemical, and optical properties were investigated using field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and UV-vis spectroscopy. FE-SEM and AFM studies revealed that the ZnSe thin film prepared using Na-3-citrate was highly uniform with very low surface roughness (3 nm) compared to those prepared using HH. XRD and XPS studies revealed formation of a cubic ZnSe phase and exhibited insignificant Zn-OH formation along with Zn-Se binding energies for both the films. UV-vis study showed that the band gap energies of ZnSe thin films prepared using HH and Na-3-citrate were 3.1 eV and 2.9 eV, respectively. These investigations show that ZnSe thin films could be grown with good optical, structural, chemical, and compositional characteristics without using a toxic HH complexing agent. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:186 / 189
页数:4
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