I-V and Gain Characteristics of Electrowetting-Based Liquid Field Effect Transistor

被引：4
|
作者：
Kim, Duk Young [1 ]
Herman, Stephen [1 ]
Steckl, Andrew J. [1 ]
机构：
[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA
来源：
2008 17TH BIENNIAL UNIVERSITY/GOVERNMENT/INDUSTRY MICRO-NANO SYMPOSIUM, PROCEEDINGS | 2008年
关键词：
electrowetting; microfluidics; hydrophobic surface; electrolyte; field effect transistor (FET);
D O I：
10.1109/UGIM.2008.8
中图分类号：
G40 [教育学];
学科分类号：
040101 ; 120403 ;
摘要：
引用
收藏
页码：2 / 5
页数：4
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