Characterisation of temperature sensitive parameters of selected silicon and silicon-carbide power devices

被引：0
|
作者：
Nowak, Mieczyslaw [1 ]
Rabkowski, Jacek [1 ]
Barlik, Roman [1 ]
机构：
[1] Warsaw Univ Sci & Technol, Inst Sterowania & Elekt Przemyslowej, PL-00662 Warsaw, Poland
来源：
PRZEGLAD ELEKTROTECHNICZNY | 2008年 / 84卷 / 07期
关键词：
temperature sensitive parameters; silicon carbide; SiC-JFET; IGBT; device characterization;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the paper, results of laboratory investigation of representative samples of semiconductor silicon and silicon-carbide power devices, such as PiN diode. Shottky diode, IGBT and JFET, are presented. With use of a thermal chamber the characteristics of temperature sensitive parameters for selected types of devices were determined by measurements in range 25 - 150 grad C using short pulses, which are not able to disturb thermal conditions.
引用
收藏
页码：12 / 16
页数：5
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