Temperature dependence of the dark current and activation energy at avalanche onset of GaN Avalanche Photodiodes

被引：0

作者：

Ulmer, M. P. ^{[2
,3
]}

Cicek, E. ^{[1
]}

McClintock, R. ^{[1
]}

Vashaei, Z. ^{[1
]}

Razeghi, M. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

[2] Northwestern Univ, CIERA, Evanston, IL 60208 USA

[3] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

来源：

HIGH ENERGY, OPTICAL, AND INFRARED DETECTORS FOR ASTRONOMY V | 2012年 / 8453卷

关键词：

GaN; Avalanche Photodiode; Visible Blind; Single Photon Counting;

D O I：

10.1117/12.924173

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (E-a) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.

引用

页数：7

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