PARAMAGNETIC PROPERTIES OF SINGLE-CRYSTAL SILICON IMPLANTED WITH IRON-GROUP TRANSITION METALS

被引：1
|
作者：
Dostanko, A. P. [1 ]
Korobko, A. O. [1 ]
Lapchuk, N. M. [2 ]
机构：
[1] Belarusian State Univ Informat & Radioelect, Minsk 220013, BELARUS
[2] Belarusian State Univ, Minsk 220050, BELARUS
来源：
JOURNAL OF APPLIED SPECTROSCOPY | 2008年 / 75卷 / 02期
关键词：
EPR spectroscopy; silicon; iron-group ions; hysteresis;
D O I：
10.1007/s10812-008-9028-3
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Samples of single-crystal silicon implanted with iron-group ions are investigated by electron paramagnetic resonance (EPR). The change in relative permittivity mu(r) of the silicon layer modified by implanted nickel ions is found. The accumulation kinetics of paramagnetic centers of amorphous regions of silicon implanted with Co, Ni, and Fe are shown to be different. Magnetic hysteresis for both the wide EPR line due to implanted impurities and the EPR line due to dangling chemical silicon bonds is found.
引用
收藏
页码：203 / 207
页数：5
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