Metal-insulator transition induced by random dipoles

被引:3
|
作者
Larcher, M. [1 ,2 ]
Menotti, C. [1 ,2 ]
Tanatar, B. [3 ]
Vignolo, P. [4 ]
机构
[1] Univ Trento, INO CNR BEC Ctr, I-38123 Povo, Italy
[2] Univ Trento, Dipartimento Fis, I-38123 Povo, Italy
[3] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey
[4] Univ Nice Sophia Antipolis, CNRS, Inst Non Lineaire Nice, F-06560 Valbonne, France
来源
PHYSICAL REVIEW A | 2013年 / 88卷 / 01期
关键词
1D ANDERSON MODEL; RANGE CORRELATED DISORDER; LOCALIZATION; DELOCALIZATION; ABSENCE; POTENTIALS; DIFFUSION; TRANSPORT; SYSTEMS; GAS;
D O I
10.1103/PhysRevA.88.013632
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We study the localization properties of a test dipole feeling the disordered potential induced by dipolar impurities trapped at random positions in an optical lattice. This random potential is marked by correlations which are a convolution of short-range and long-range ones. We show that when short-range correlations are dominant, extended states can appear in the spectrum. Introducing long-range correlations, the extended states, if any, are wiped out and localization is restored over the whole spectrum. Moreover, long-range correlations can either increase or decrease the localization length at the center of the band, which indicates a richer behavior than previously predicted.
引用
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页数:8
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