Angle dependence of planar Hall resistance and anisotropic magnetoresistance of (Ga, Mn)As and Permalloy microdevices

被引：6

作者：

Jung, M. H. ^{[1
]}

Park, S. ^{[2
]}

Eom, J. ^{[3
,4
]}

Chun, S. H. ^{[3
,4
]}

Shin, K. ^{[5
]}

机构：

[1] Sogang Univ, Dept Phys, Seoul 121742, South Korea

[2] Korea Basic Sci Inst, Quantum Mat Res Team, Taejon 305333, South Korea

[3] Sejong Univ, Dept Phys, Seoul 143747, South Korea

[4] Sejong Univ, Inst Fundamental Phys, Seoul 143747, South Korea

[5] Korea Inst Sci & Technol, Seoul 136791, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 08期

关键词：

D O I：

10.1063/1.3003049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present systematic studies on the angle dependence of planar Hall resistance and anisotropic magnetoresistance of ferromagnetic semiconductor (Ga,Mn) As and metallic Permalloy (Py) microdevices. (Ga,Mn) As shows two distinct planar Hall resistance switchings when the magnetic field is applied in the plane, indicating the magnetization reversal by 90 degrees due to the cubic magnetocrystalline anisotropy. Similar magnetization reversal is observed in metallic Py microdevices. The broader planar Hall resistance jump observed in the Py device is attributed to the uniaxial shape anisotropy and complex domain rotation at the voltage probe. Nevertheless the observed planar Hall effect of Py is comparable to that of (Ga, Mn)As. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3003049]

引用

页数：6

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