Controlled synthesis of carbon nanostructures using aligned ZnO nanorods as templates

被引:25
|
作者
Mbuyisa, Puleng [2 ]
Bhardwaj, Sunil P. [1 ]
Rigoni, Federica [3 ,4 ]
Carlino, Elvio [1 ]
Pagliara, Stefania [3 ,4 ]
Sangaletti, Luigi [3 ,4 ]
Goldoni, Andrea [5 ]
Ndwandwe, Muzi [2 ]
Cepek, Cinzia [1 ]
机构
[1] Ist Off Mat CNR, Lab TASC, I-34149 Trieste, Italy
[2] Univ Zululand, Dept Phys & Engn, ZA-3886 Kwa Dlangezwa, South Africa
[3] Univ Cattolica Sacro Cuore, Dipartimento Matemat & Fis, I-25121 Brescia, Italy
[4] Univ Cattolica Sacro Cuore, Interdisciplinary Lab Adv Mat Phys, I-25121 Brescia, Italy
[5] Sincrotrone Trieste SCpA, I-34149 Trieste, Italy
基金
新加坡国家研究基金会;
关键词
FIELD-EMISSION; GAS; GROWTH; NANOWIRES; NANOTUBES;
D O I
10.1016/j.carbon.2012.07.034
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
By combining in situ X-ray photoemission spectroscopy, ex situ high resolution transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy, we show that chemical vapor deposition (CVD) on vertically aligned ZnO nanorods can synthesize different carbon nanostructures (CNs), whose morphology is driven by the ZnO nanorods and whose dimensions and structures change as a function of the process temperature. The CNs range from amorphous carbon cups, completely covering the nanorods, to high density one-dimensional carbon nano-dendrites (CNDs), which start to appear like short hairs on the ZnO nanorods. The nanorods are partially etched when the process is done at 630-800 degrees C, while they are completely etched at temperatures higher than 800 degrees C. In the latter case, CNDs emerge from a porous carbon sponge formed at the substrate interface but they are preferentially aligned along the location of the pristine ZnO nanorods. When used as a chemiresisitor the CND-ZnO structures have a higher sensitivity to ammonia compared to chemiresistors made by bare ZnO nanorods, to other one-dimensional CNs, like carbon nanotubes or other metal/metal-oxides hybrid CNs. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:5472 / 5480
页数:9
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