Photo-induced doping effect and dynamic process in monolayer MoSe2

Dynamic processes of electron transfer by optical doping in monolayer MoSe(2)at 6 K are investigated via measuring time resolved photoluminescence (PL) traces under different excitation powers. Time-dependent electron transfer process can be analyzed by a power-law distribution oft(-alpha)with alpha= 0.1-0.24, depending on the laser excitation power. The average electron transfer time of approximately 27.65 s is obtained in the excitation power range of 0.5 to 100 mu W. As the temperature increases from 20 to 44 K, the energy difference between the neutral and charged excitons is observed to decrease.