In situ growth of columnar MoO3 buffer layer for organic photovoltaic applications

被引：9

作者：

Wang, Guojie ^{[1
,2
]}

Jiu, Tonggang ^{[2
]}

Li, Pandeng ^{[2
]}

Li, Jun ^{[2
]}

Sun, Chunming ^{[2
]}

Lu, Fushen ^{[1
]}

Fang, Junfeng ^{[2
]}

机构：

[1] Shantou Univ, Dept Chem, Coll Sci, Shantou 515063, Guangdong, Peoples R China

[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R China

来源：

ORGANIC ELECTRONICS | 2014年 / 15卷 / 01期

基金：

中国国家自然科学基金;

关键词：

In situ; MoO3; Organic photovoltaics; Buffer layer; POLYMER SOLAR-CELLS; TRANSITION-METAL OXIDES; LOW-TEMPERATURE; INTERFACIAL LAYER; THIN-FILMS; EFFICIENT; ULTRATHIN; TANDEM;

D O I：

10.1016/j.orgel.2013.10.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Columnar MoO3 in situ growth prepared from direct converting soluble Mo-containing precursor during active layer thermal annealing was utilized as anode buffer layer to fabricate organic bulk heterojunction photovoltaics. The columnar morphology could improve the interface contact between active layer and buffer layer. The structure and phase of in situ formed MoO3 were studied by X-ray powder diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). We demonstrated that the organic photovoltaic devices based on P3HT:PC61BM using in situ formed columnar MoO3 as anode buffer layer presented a high open-circuit voltage and fill factor leading to an efficiency of 3.92%, which is higher than the controlled PEDOT:PSS-based devices. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：29 / 34

页数：6

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