Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator

被引：3

作者：

Wang, Lijuan ^{[1
]}

Li, Yiping ^{[2
]}

Song, Xiaofeng ^{[1
]}

Liu, Xin ^{[1
]}

Zhang, Long ^{[1
]}

Yan, Donghang ^{[3
]}

机构：

[1] Changchun Univ Technol, Sch Chem Engn, Changchun 130012, Peoples R China

[2] Changchun Univ Sci & Technol, Sch Sci, Changchun 130022, Peoples R China

[3] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 24期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM-TRANSISTOR; ORGANIC SEMICONDUCTOR; CAPACITANCE;

D O I：

10.1063/1.4845815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the interfacial and electrical properties of vanadyl-phthalocyanine (VOPc) metal-insulator-semiconductor devices by the measurement of capacitance and conductance. The devices have been fabricated on ordered para-sexiphenyl (p-6P) layer with silicon nitride (SiNx) as gate insulator. The VOPc/p-6P/SiNx devices have shown a negligible hysteresis, low series resistance, and high operated frequency. Bulk traps have been distinguished from interface traps by two loss peaks in conductance measurement. Trap densities and distribution of trap energy level have been obtained. The improved properties indicate that VOPc/p-6P devices with SiNx insulator hold a great promise of application in flexible displays. (C) 2013 AIP Publishing LLC.

引用

页数：4

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