The effect of substrate and post annealing temperature on the electrical properties of polycrystalline InSe thin films

被引：11
|
作者：
Parlak, M [1 ]
Erçelebi, Ç [1 ]
机构：
[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1999年 / 10卷 / 04期
关键词：
D O I：
10.1023/A:1008980919971
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The correlation between the electrical properties of vacuum evaporated InSe thin films and the growth conditions as well as post depositional annealing has been investigated. The electrical properties of the deposited films have been studied in the temperature range of 50-320 K. The donor levels present in the InSe films have been analysed by applying the single donor-single acceptor model to the electrical data.
引用
收藏
页码：313 / 319
页数：7
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