Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodes

被引：4

作者：

Bobby, A. ^{[1
]}

Gupta, P. S. ^{[1
]}

Antony, B. K. ^{[1
]}

机构：

[1] Indian Sch Mines, Dept Appl Phys, Dhanbad 826004, Jharkhand, India

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2012年 / 60卷 / 01期

关键词：

BARRIER HEIGHT; TEMPERATURE-DEPENDENCE; CONDUCTION MECHANISM; CURRENT TRANSPORT; SILICON; CONTACTS;

D O I：

10.1051/epjap/2012120343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reverse I-V characteristics of In-pWSe(2) and Al-pWSe(2) Schottky barrier diodes were investigated at room temperature with two different metal thicknesses. A model is presented on the basis of thermionic emission and tunneling to explain the unusually high leakage current observed in these diodes. It has been identified that the major contribution to leakage current is by tunneling mechanism, which significantly affects the reverse I-V characteristics of the Schottky contacts, along with a very small amount of thermionic emission current. We have also extracted various Schottky diode parameters of the two types of diodes fabricated and compared the data. It is found that the diode with 1000 A metal thickness possesses more tunneling current compared to 500 angstrom diode.

引用

页数：5

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