Comparison of the dilute bismide and nitride alloys GaAsBi and GaAsN

被引：10
|
作者：
Mascarenhas, Angelo [1 ]
Kini, Rajeev [1 ]
Zhang, Yong [1 ]
France, Ryan [1 ]
Ptak, Aaron [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 03期
关键词：
TIME-RESOLVED PHOTOLUMINESCENCE; III-V-SEMICONDUCTORS; INDUCED DEFECT LINES; ISOELECTRONIC TRAPS; GALLIUM-PHOSPHIDE; NITROGEN; GAP; LUMINESCENCE; BAND; BI;
D O I：
10.1002/pssb.200880547
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Dilute III-V alloys containing N or Bi share many features that are common, but some that are distinct. In GaP and GaAs, both the substituent species N and Bi behave as isoelectronic impurity traps and both lead to a giant bandgap bowing phenomenon. The isolated N and Bi impurities generate bound states in GaP but resonant states in GaAs. N impurity pairs have been observed as bound states in GaP and in GaAs whereas Bi impurity pairs have not been observed as bound states in GaP nor in GaAs. Low temperature photoluminescence studies on GaAs1-xBix show undulations in the spectra but these are not associated with Bi-Bi pairs. Theoretical arguments for the differing behaviour of the N and Bi isolated impurities in GaAs as a function of pressure are provided. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：504 / 507
页数：4
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