Structural characterization of ordered SiGe films grown on Ge(100) and Si(100) substrates

被引：5

作者：

Araki, T ^{[1
]}

Fujimura, N ^{[1
]}

Ito, T ^{[1
]}

Wakahara, A ^{[1
]}

Sasaki, A ^{[1
]}

机构：

[1] KYOTO UNIV, DEPT ELECT SCI & ENGN, KYOTO 60601, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.363333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observe the formation of an ordered structure in Si1-xGex films grown on Ge(100) substrates, as well as on Si(100) substrates, by molecular beam epitaxy. The structural characterization of these ordered films is performed. The degree of order in the films is quantitatively measured using x-ray diffraction. The dependence of the degree of order on Ge composition is similar between films on Ge(100) and Si(100) substrates. By cartful x-ray diffraction analysis, we find that the degree of order is not equivalent in variants. (C) 1996 American Institute of Physics.

引用

页码：3804 / 3807

页数：4

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