Graphene segregation on Ni/SiO2/Si substrates by alcohol CVD method

被引：11

作者：

Miyasaka, Yuta ^{[1
]}

Matsuyama, Akihiro ^{[2
]}

Nakamura, Atsushi ^{[3
]}

Temmyo, Jiro ^{[1
,3
]}

机构：

[1] Shizuoka Univ, Grad Sch Elect, Naka Ku, 3-5-1 Jyohoku, Hamamatsu, Shizuoka 4328011, Japan

[2] Unicraft Nagura Corp, Shizuoka, Japan

[3] Shizuoka Univ, Res Inst Elect, Shizuoka, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期

关键词：

graphene; catalyst; CVD; segregation; FILMS; SURFACES; GRAPHITE; GROWTH;

D O I：

10.1002/pssc.201000533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We performed graphene synthesis on Ni films using ethanol gas in this report. A size of a segregated graphene is responsible for a size of underlying Ni catalyst according to evaluations of Raman spectroscopy, FE-SEM and AFM. A distribution of graphene layer number is also observed because of a surface roughness of Ni. A domain size of segregated graphene networks depends on the size of underlying Ni grains. Comparing plots of W-2D as a function of I-G/I-2D between a segregated graphene on a Ni film and exfoliated graphene on SiO2/Si substrates by pealing method, shows similar tendency. Thus, layer number of segregated graphene on Ni film can be speculated without transferring into other substrates. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：577 / 579

页数：3

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