Development of high-power S-band load

被引:6
|
作者
Meng, Xiangcong [1 ,2 ]
Shi, Jiaru [1 ,2 ]
Zha, Hao [1 ,2 ]
Gao, Qiang [1 ,2 ]
Liu, Zening [1 ,2 ]
Liu, Jiayang [1 ,2 ]
Jiang, Yuliang [1 ,2 ]
Wang, Ping [1 ,2 ]
Chen, Huaibi [1 ,2 ]
Qiu, Jiaqi [3 ]
机构
[1] Tsinghua Univ, Dept Engn Phys, CN-100084 Beijing, Peoples R China
[2] Tsinghua Univ, Minist Educ, Key Lab Particle & Radiat Imaging, CN-100084 Beijing, Peoples R China
[3] Nuctech Co Ltd, CN-100084 Beijing, Peoples R China
基金
中国国家自然科学基金;
关键词
High-power load; Microwave device; S-band; High-power test stand;
D O I
10.1016/j.nima.2019.02.002
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Many prototypes of all stainless steel high-power loads have been developed in Tsinghua University to meet the needs of high-power test systems for different microwave bands. The loads, which work at the S-band with a center frequency of 2856 MHz, are based on a waveguide structure with regular grooves. These loads are tested at 290 MW peak power successfully. This study presents the design, simulation, fabrication, high-power test results and analysis of multipactor phenomenon.
引用
收藏
页码:209 / 213
页数:5
相关论文
共 50 条
  • [1] HIGH-POWER S-BAND POWER DIVIDER
    TRUE, RM
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1967, MT15 (10) : 584 - &
  • [2] S-band high-power broadband transmitter
    Baturov, Boris B.
    Vinogradnyi, Alexander V.
    Koshevarov, Gennady A.
    Melnikov, Leonid Ya.
    Korolyev, Alexander N.
    Meleshkevich, Pavel M.
    Poognin, Victor I.
    [J]. IEEE MTT-S International Microwave Symposium Digest, 2000, 1 : 557 - 559
  • [3] HIGH-POWER S-BAND JUNCTION CIRCULATOR
    STERN, RA
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (12) : 840 - 842
  • [4] A HIGH-POWER S-BAND BIPOLAR AMPLIFIER
    FATHY, A
    KALOKITIS, D
    [J]. MICROWAVE JOURNAL, 1989, 32 (06) : 137 - &
  • [5] An S-band high-power broadband transmitter
    Baturov, BB
    Vinogradnyi, AV
    Koshevarov, GA
    Melnikov, LY
    Korolyev, AN
    Meleshkevich, PM
    Poognin, VI
    [J]. 2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 557 - 559
  • [6] S-band high-power voltage controlled oscillator
    Lei, C
    Yi, S
    [J]. 2000 2ND INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2000, : 21 - 24
  • [7] High-power FETS application in S-BAND amplifier
    Zajdel, A
    [J]. MIKON-2002: XIV INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS, VOLS 1-3, PROCEEDINGS, 2002, : 520 - 523
  • [8] A High-Power S-Band RF Window for a Klystron
    A. M. Barnyakov
    A. E. Levichev
    E. V. Lider
    O. A. Pavlov
    I. L. Pivovarov
    S. L. Samoylov
    L. Yu. Shvedova
    [J]. Instruments and Experimental Techniques, 2018, 61 : 233 - 238
  • [9] A High-Power S-Band RF Window for a Klystron
    Barnyakov, A. M.
    Levichev, A. E.
    Lider, E. V.
    Pavlov, O. A.
    Pivovarov, I. L.
    Samoylov, S. L.
    Shvedova, L. Yu.
    [J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2018, 61 (02) : 233 - 238
  • [10] Development and testing of a high-power S-band klystron at BINP SB RAS
    ALevichev
    ABarnyakov
    SSamoylov
    DNikiforov
    VIvanov
    MArsentyeva
    DChekmenev
    OPavlov
    IPivovarov
    [J]. Nuclear Science and Techniques, 2024, 35 (07) : 84 - 93