Metallorganic chemical vapor deposition of Ir films with iridium acetylacetonate and carbonyl precursors

被引:0
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作者
Sun, YM [1 ]
Endle, J [1 ]
Smith, K [1 ]
Ekerdt, JG [1 ]
Hance, RL [1 ]
Alluri, P [1 ]
White, JM [1 ]
机构
[1] Univ Texas, Sci & Technol Ctr Growth Synth & Anal Elect Mat, Austin, TX 78712 USA
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T [工业技术];
学科分类号
08 ;
摘要
Iridium acetylacetonate, dicarbonylacetylacetonato iridium, and tetrakisiridium dodecacarbonyl (iridium carbonyl) have been evaluated for metallorganic chemical vapor deposition (CVD) of pure iridium films. Temperature programmed mass spectroscopy reveals that iridium tris-acetylacetonate and dicarbonylacetylactonato iridium have high thermal stability and sublime at 200 and 100 degrees C in vacuum, respectively. Iridium carbonyl decomposes upon sublimation at temperatures above 120 degrees C. Purl CVD Zr films were obtained using iridium carbonyl; however, carbon is incorporated into the iridium films with the iridium trisacetylacetonate and dicarbonylacetylactonato iridium precursors unless a reactive gas, such as oxygen is co-dosed. Go-dosed oxygen also increases the film deposition rate and significantly decreases the film growth temperatures. Particles were found on the films grown with iridium carbonyl between 280 to 400 degrees C, indicating that gas phase nucleation occurred during deposition.
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页码:101 / 106
页数:6
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