Optical properties of self-assembled GaxIn1-xAs/InP quantum wires

被引：0
|
作者：
Alén, B
Biswas, D
Martínez-Pastor, J
García, JM
González, L
机构：
[1] Univ Valencia, Inst Ciencia Mat, Valencia 46071, Spain
[2] CSIC, CNM, Inst Microelect Madrid, Tres Cantos 28760, Madrid, Spain
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2002年 / 190卷 / 03期
关键词：
D O I：
10.1002/1521-396X(200204)190:3<763::AID-PSSA763>3.0.CO;2-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Temperature dependent photoluminescence studies have been carried out on several samples containing self-assembled GaxIn1-xAs/InP quantum wires. A red-shift of the emission wavelength is observed when increasing the Ga content in the ahoy, but the overall optical quality decreases. In the case of x = 0.15, the photoluminescence is not sensible to temperature and the emission band is conserved until room temperature is reached, which could be explained if the nanostructures are considered to be almost amorphous.
引用
收藏
页码：763 / 768
页数：6
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