Current induced magnetization switching in Pt/Co/Cr structures with enhanced perpendicular magnetic anisotropy and spin Hall effect

被引:6
|
作者
Cui, Baoshan [1 ,2 ,3 ]
Yun, Jijun [1 ,2 ]
Yang, Kunya [1 ,2 ]
Wu, Hao [3 ]
Zhu, Zhendong [4 ]
Zuo, Yalu [1 ,2 ]
Yang, Dezheng [1 ,2 ]
Gao, Meizhen [1 ,2 ]
Zhang, Zongzhi [4 ]
Xi, Li [1 ,2 ]
Wang, Kang L. [3 ]
机构
[1] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
[2] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
[3] Univ Calif Los Angeles, Dept Elect & Comp Engn, Los Angeles, CA 90095 USA
[4] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
ELECTRONIC-STRUCTURE; DRIVEN; TORQUE;
D O I
10.7567/1882-0786/ab0a42
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the perpendicular magnetic anisotropy (PMA) and spin-orbit torques (SOTs) in Pt/Co/Cr stacks as a function of Cr thickness. An enhanced PMA is observed and ascribed to the strong interfacial anisotropy between Co and Cr. Moreover, SOTs induced magnetization switching is achieved under relatively small critical current density in the order of 10(6) A cm(-2) due to the enhanced effective spin Hall angle (theta(eff)(SH)) up to 0.15-0.27. Significantly, the linear dependence between theta(eff)(SH) and the square of longitudinal resistivity suggests that the spin Hall effect may arise from the intrinsic mechanism in our systems. (C) 2019 The Japan Society of Applied Physics
引用
收藏
页数:5
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