Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

被引：68
|
作者：
Chen, C. [1 ]
Gao, S. [1 ]
Zeng, F. [1 ]
Wang, G. Y. [1 ]
Li, S. Z. [1 ]
Song, C. [1 ]
Pan, F. [1 ]
机构：
[1] Tsinghua Univ, Sch Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 04期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.4816747
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Quantized conductance was observed in an anion-migration-based resistive switching memory cell with the structure of (Ti, Ta, W)/Ta2O5/Pt. The conductance of the cell varies stepwise in units of single atomic conductance (77.5 mu S), which is responsible for the formation and annihilation of atomic scale filament built from oxygen vacancies in Ta2O5 film. The quantized conductance behavior can be modulated by voltage pulses as fast as 100 ns. The demonstration of conductance quantization in Ta2O5 based memory device would open the door for quantized multi-bit data storage of anion-migration-based resistive switching nonvolatile memories. (C) 2013 AIP Publishing LLC.
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页数：4
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